Eckhardt Research Center
5640 South Ellis Avenue
Chicago, IL 60637
ANL, Bldg. 440
Felicia Lee, Laurie Eichberger
Supratik Guha is a materials scientist whose research is on new semiconductors and oxide materials and devices for new computing architectures, cyberphysical sensing systems, and energy conversion technologies. He is particularly interested in the discovery of thin film materials and novel devices that can be used for ultra-low power non Boolean computing and sensing; and believes in a top down, system level perspective for the need for specific materials and devices.
Supratik pioneered the materials research that led to IBM’s high-k dielectric metal gate transistor technology, one of the most significant developments in silicon CMOS technology in decades. The processor chips in over fifty percent of smart phones and tablets sold today use nanoscale dielectrics and processes developed by Supratik. He has also worked extensively on earth abundant thin film photovoltaics, and his research group has been responsible for demonstrating the highest efficiency vacuum deposited Cu2ZnSn(S,Se)4 solar cells, and the first tandem chalcogenide/perovskite solar cells to date. More recently his activities have included sensor-based analytics for geo-spatial applications such as high-resolution agriculture and the tracking of pollutants in rivers. As a manager at IBM he has had significant experience developing inter-company joint R&D alliances and has initiated or expanded several successful programs such as silicon photonics, quantum computing, carbon electronics, photovoltaics, and sensor based analytics.
Supratik Guha is the Director of the Nanoscience and Technology Division and the Center for Nanoscale Materials at the Argonne National Laboratory, and a Professor at the Institute for Molecular Engineering, The University of Chicago. He is also the Senior Scientific Advisor to the Director at Argonne.
Dr. Guha came to The University of Chicago and Argonne in 2015 after spending twenty years at IBM Research where he last served as the Director of Physical Sciences. At IBM, Dr. Guha pioneered the materials research that led to IBM’s high dielectric constant metal gate transistor, one of the most significant developments in silicon microelectronics technology. He was also responsible for initiating or significantly expanding IBM’s R&D programs in silicon photonics, quantum computing, sensor based cyberphysical systems and photovoltaics.
Dr. Guha is a member of the National Academy of Engineering and a Fellow of the Materials Research Society, American Physical Society, a 2018 Department of Defense Vannevar Bush Faculty Fellow, and the recipient of the 2015 Prize for Industrial Applications of Physics. He received his Ph.D. in materials science in 1991 from the University of Southern California, and a B.Tech in 1985 from the Indian Institute of Technology, Kharagpur. At The University of Chicago and Argonne, his interests are focused on discovery science in the area of nano-scale materials and epitaxy for energy, sensing and future information processing.
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