He's areas of research focus on first-principles simulation of defects in semiconductors for quantum information processing, including development of methods to simulate the electronic structure and spin Hamiltonian of defects, theoretical interpretation of relevant experimental observations, and exploration of novel defects. He also studies development of density functional theory and many-body perturbation theory.
Probing the Coherence of Solid-State Qubits at Avoided Crossings
M. Onizhuk, K. C. Miao, J. P. Blanton, H. Ma, C. P. Anderson, A. Bourassa, D. D. Awschalom, G. Galli. Probing the Coherence of Solid-State Qubits at Avoided Crossings. PRX Quantum. 2021. Vol. 2. 10.1103/PRXQuantum.2.010311.
Entanglement and control of single nuclear spins in isotopically engineered silicon carbide
A. Bourassa, C. P. Anderson, K. C. Miao, M. Onizhuk, H. Ma, A. L. Crook, H. Abe, J. Ul-Hassan, T. Ohshima, N. T. Son, G. Galli, D. D. Awschalom. Entanglement and control of single nuclear spins in isotopically engineered silicon carbide. Nat. Mater. 2020. 10.1038/s41563-020-00802-6.
Finite-field approach to solving the Bethe-Salpeter equation
Ngoc Linh Nguyen, He Ma, Marco Govoni, Francois Gygi and Giulia Galli. Finite-field approach to solving the Bethe-Salpeter equation. Phys. Rev. Lett.. 2019. Vol. 122, Pg. 237402.
All-electron density functional calculations for electron and nuclear spin interactions in molecule
Krishnendu Ghosh, He Ma, Vikram Gavini and Giulia Galli . All-electron density functional calculations for electron and nuclear spin interactions in molecule. Phys. Rev. Mat. . 2019. Vol. 3, Pg. 043801.
A Finite-field Approach for GW Calculations Beyond the Random Phase Approximation
He Ma, Marco Govoni, Francois Gygi and Giulia Galli. A Finite-field Approach for GW Calculations Beyond the Random Phase Approximation. J. Chem. Theory. Comp.. 2019. Vol. 15, Pg. 154-164.
Designing defect-based qubit candidates in wide-gap binary semiconductors for quantum technologies
Hosung Seo, He Ma, Marco Govoni, and Giulia Galli. Designing defect-based qubit candidates in wide-gap binary semiconductors for quantum technologies. Phys. Rev. Materials. 2017. Vol. 1, Pg. 075002.