Examination of flatband and threshold voltage tuning of HfO2/TiN field effect transistors by dielect

“Examination of flatband and threshold voltage tuning of HfO2/TiN field effect transistors by dielectric cap layers,” S Guha, V. K. Paruchuri, M. Copel, V. Narayanan, Y.Y. Wang, P.E. Batson, N. A. Bojarczuk, B. Linder and B. Doris Applied Physics Letters , 90 (9), 2902, 2007

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