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Awschalom Group

Alexandre Bourassa

  • Graduate Student Alumnus;
    Google, Santa Barbara, CA

Probing the Coherence of Solid-State Qubits at Avoided Crossings

M. Onizhuk, K. C. Miao, J. P. Blanton, H. Ma, C. P. Anderson, A. Bourassa, D. D. Awschalom, G. Galli. Probing the Coherence of Solid-State Qubits at Avoided Crossings. PRX Quantum. 2021. Vol. 2. 10.1103/PRXQuantum.2.010311.

Entanglement and control of single nuclear spins in isotopically engineered silicon carbide

A. Bourassa, C. P. Anderson, K. C. Miao, M. Onizhuk, H. Ma, A. L. Crook, H. Abe, J. Ul-Hassan, T. Ohshima, N. T. Son, G. Galli, D. D. Awschalom. Entanglement and control of single nuclear spins in isotopically engineered silicon carbide. Nat. Mater. 2020. 10.1038/s41563-020-00802-6.

Universal coherence protection in a solid-state spin qubit

K. C. Miao, J. P. Blanton, C. P. Anderson, A. Bourassa, A. L. Crook, G. Wolfowicz, H. Abe, T. Ohshima, D. D. Awschalom. Universal coherence protection in a solid-state spin qubit. Science. 2020. 10.1126/science.abc5186.

Developing silicon carbide for quantum spintronics

N. T. Son, C. P. Anderson, A. Bourassa, K. C. Miao, C. Babin, M. Widmann, M. Niethammer, J. U. Hassan, N. Morioka, I. G. Ivanov, F. Kaiser, J. Wrachtrup, D. D. Awschalom. Developing silicon carbide for quantum spintronics. Appl. Phys. Lett.. 2020. Vol. 116. Pg. 190501.

Purcell enhancement of a single silicon carbide color center with coherent spin control

A. L. Crook, C. P. Anderson, K. C. Miao, A. Bourassa, H. Lee, S. L. Bayliss, D. O. Bracher, X. Zhang, H. Abe, T. Ohshima, E. L. Hu, D. D. Awschalom. Purcell enhancement of a single silicon carbide color center with coherent spin control. Nano. Lett.. 2020. Vol. 20. Pp. 3427. 10.1021/acs.nanolett.0c00339.

Electrical and optical control of single spins integrated in scalable semiconductor devices

C. P. Anderson, A. Bourassa, K. C. Miao, G. Wolfowicz, P. J. Mintun, A. L. Crook, H. Abe, J. U. Hassan, N. T. Son, T. Ohshima, D. D. Awschalom. Electrical and optical control of single spins integrated in scalable semiconductor devices. Science. 2019. Vol. 366, Pg. 1225.

Electrically driven optical interferometry with spins in silicon carbide

K. C. Miao, A. Bourassa, C. P. Anderson, S. J. Whiteley, A. L. Crook, S. L. Bayliss, G. Wolfowicz, G. Thiering, P. Udvarhelyi, V. Ivady, H. Abe, T. Ohshima, A. Gali, D. D. Awschalom. Electrically driven optical interferometry with spins in silicon carbide. Science Advances. 2019. Vol. 5, eaay0527.

Spin-phonon interactions in silicon carbide addressed by Gaussian acoustics

S. J. Whiteley, G. Wolfowicz, C. P. Anderson, A. Bourassa, H. Ma, M. Ye, G. Koolstra, K. J. Satzinger, M. V. Holt, F. J. Heremans, A. N. Cleland, D. I. Schuster, G. Galli, D. D. Awschalom. Spin-phonon interactions in silicon carbide addressed by Gaussian acoustics. Nature Physics. 2019. Vol. 15, Pg. 490–495.